US 12,002,823 B2
Solid-state image sensor with imaging device blocks that each include imaging devices
Toshiaki Ono, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/252,787
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jun. 7, 2019, PCT No. PCT/JP2019/022709
§ 371(c)(1), (2) Date Dec. 16, 2020,
PCT Pub. No. WO2020/008802, PCT Pub. Date Jan. 9, 2020.
Claims priority of application No. 2018-126651 (JP), filed on Jul. 3, 2018.
Prior Publication US 2021/0265402 A1, Aug. 26, 2021
Int. Cl. H01L 27/146 (2006.01); H04N 25/778 (2023.01); H10K 39/32 (2023.01)
CPC H01L 27/14609 (2013.01) [H01L 27/14645 (2013.01); H04N 25/778 (2023.01); H10K 39/32 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A solid-state image sensor comprising:
a plurality of imaging device blocks each including P×Q (where P≥2, Q≥1) imaging devices, wherein
each of the imaging devices includes a photoelectric conversion portion that includes a photoelectric conversion layer, an insulating layer, and a charge accumulating electrode arranged opposed to the photoelectric conversion layer with an insulating layer interposed therebetween,
in each of the imaging device blocks, a first charge movement controlling electrode is provided between the imaging devices,
a second charge movement controlling electrode is provided between the imaging device blocks,
in the imaging device blocks, P imaging devices are arrayed along a first direction, and Q imaging device is arrayed along a second direction, and
charge accumulated in the photoelectric conversion layer of a (P−1)th imaging device from a first imaging device along the first direction is transferred to the photoelectric conversion layer of a Pth imaging device and read out together with charge accumulated in the photoelectric conversion layers of Q Pth imaging devices, under control of the first charge movement controlling electrode.