US 12,002,821 B2
Display apparatus and method of manufacturing the same
Joongeol Kim, Yongin-si (KR); Seulki Kim, Yongin-si (KR); Youngjae Jeon, Yongin-si (KR); Hyunseong Kang, Yongin-si (KR); Seungrae Kim, Yongin-si (KR); Jongin Kim, Yongin-si (KR); Seokhwan Bang, Yongin-si (KR); Seungsok Son, Yongin-si (KR); Donghoon Shin, Yongin-si (KR); Kapsoo Yoon, Yongin-si (KR); Kwangsoo Lee, Yongin-si (KR); Woogeun Lee, Yongin-si (KR); Jaehyun Lee, Yongin-si (KR); Kisu Jin, Yongin-si (KR); Junewhan Choi, Yongin-si (KR); Jongmoo Huh, Yongin-si (KR); and Jiyun Hong, Yongin-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Jun. 25, 2021, as Appl. No. 17/358,640.
Claims priority of application No. 10-2020-0144578 (KR), filed on Nov. 2, 2020.
Prior Publication US 2022/0139970 A1, May 5, 2022
Int. Cl. H01L 27/12 (2006.01); H01L 25/16 (2023.01); H10K 59/124 (2023.01); H10K 59/131 (2023.01); H10K 71/00 (2023.01); H10K 59/12 (2023.01)
CPC H01L 27/1288 (2013.01) [H01L 25/167 (2013.01); H01L 27/124 (2013.01); H01L 27/1248 (2013.01); H10K 59/124 (2023.02); H10K 59/131 (2023.02); H10K 71/00 (2023.02); H10K 59/1201 (2023.02)] 25 Claims
OG exemplary drawing
 
1. A display apparatus comprising:
a substrate comprising a display area and a peripheral area adjacent to the display area;
a thin-film transistor located in the display area of the substrate, and comprising:
a semiconductor layer; and
a gate electrode overlapping a channel region of the semiconductor layer;
a conductive layer disposed between the substrate and the semiconductor layer, and comprising:
a first electrode located in the display area of the substrate; and
a pad electrode located in the peripheral area of the substrate,
a first insulating layer disposed between the conductive layer and the semiconductor layer and having a first opening that exposes at least a portion of an upper surface of the pad electrode;
a second insulating layer disposed on the gate electrode of the thin-film transistor and having a second opening coinciding with the first opening of the first insulating layer, the gate electrode being disposed between the second insulating layer and the substrate; and
a pixel electrode disposed over the second insulting layer and electrically connected to the thin-film transistor.