US 12,002,820 B2
Active matrix substrate
Jun Nishimura, Sakai (JP); Akira Tagawa, Sakai (JP); Yohei Takeuchi, Sakai (JP); and Yasuaki Iwase, Sakai (JP)
Assigned to SHARP KABUSHIKI KAISHA, Sakai (JP)
Filed by Sharp Kabushiki Kaisha, Sakai (JP)
Filed on Feb. 2, 2022, as Appl. No. 17/591,042.
Claims priority of provisional application 63/146,291, filed on Feb. 5, 2021.
Prior Publication US 2022/0254814 A1, Aug. 11, 2022
Int. Cl. H01L 27/12 (2006.01); H01L 29/786 (2006.01)
CPC H01L 27/1251 (2013.01) [H01L 27/124 (2013.01); H01L 29/78633 (2013.01); H01L 27/1225 (2013.01)] 16 Claims
OG exemplary drawing
 
1. An active matrix substrate comprising:
a substrate; and
a plurality of oxide semiconductor TFTs supported on the substrate, wherein:
the plurality of oxide semiconductor TFTs include a plurality of first TFTs and a plurality of second TFTs,
each of the first TFTs includes a first lower electrode, a first insulating layer that covers the first lower electrode, a first oxide semiconductor layer disposed on the first insulating layer, and a first gate electrode disposed on a portion of the first oxide semiconductor layer with a first gate insulating layer therebetween,
in each of the first TFTs,
the first oxide semiconductor layer includes a first channel region that overlaps the first gate electrode when viewed in a normal direction of the substrate, and
the first lower electrode has a first light-shielding portion that overlaps an entirety of the first channel region when viewed in the normal direction of the substrate, and the first light-shielding portion includes a first metal film,
each of the second TFTs includes a second lower electrode, the first insulating layer that is extended to cover the second lower electrode, a second oxide semiconductor layer disposed on the first insulating layer, and a second gate electrode disposed on a portion of the second oxide semiconductor layer with a second gate insulating layer therebetween, and
in each of the second TFTs,
the second oxide semiconductor layer includes a second channel region that overlaps the second gate electrode when viewed in the normal direction of the substrate, and
the second lower electrode has a light-transmitting portion that overlaps at least a portion of the second channel region when viewed in the normal direction of the substrate, and the light-transmitting portion includes a first transparent conductive film but not a light-shielding metal film.