US 12,002,812 B2
Method of producing a semiconductor component and semiconductor component
Dirk Meinhold, Dresden (DE); and Steffen Bieselt, Wehlen (DE)
Assigned to Infineon Technologies Dresden GmbH & Co. KG, Dresden (DE)
Filed by Infineon Technologies Dresden GmbH & Co. KG, Dresden (DE)
Filed on Feb. 23, 2022, as Appl. No. 17/678,580.
Claims priority of application No. 102021105476.1 (DE), filed on Mar. 8, 2021.
Prior Publication US 2022/0285402 A1, Sep. 8, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 27/12 (2006.01)
CPC H01L 27/1203 (2013.01) [H01L 21/02422 (2013.01); H01L 21/02554 (2013.01); H01L 21/02595 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of producing a semiconductor component, the method comprising:
providing a silicon-based substrate;
depositing an oxide layer on the silicon-based substrate;
removing a ring-shaped section of the oxide layer to provide a corresponding exposed ring-shaped section on the silicon-based substrate;
depositing a polycrystalline silicon layer on the oxide layer and simultaneously a crystalline silicon layer on the exposed ring-shaped section on the silicon-based substrate to form a ring-shaped crystalline silicon layer;
producing an electronic component based on the polycrystalline silicon layer, wherein the ring-shaped crystalline silicon layer surrounds the electronic component; and
mounting a glass- or silicon-based lid on the ring-shaped crystalline silicon layer.