US 12,002,791 B2
Light emitting device, display panel, and display panel manufacturing method
Kunpeng He, Shenzhen (CN)
Assigned to SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Shenzhen (CN)
Appl. No. 17/435,153
Filed by SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Shenzhen (CN)
PCT Filed Jun. 8, 2021, PCT No. PCT/CN2021/098778
§ 371(c)(1), (2) Date Aug. 31, 2021,
PCT Pub. No. WO2022/252249, PCT Pub. Date Dec. 8, 2022.
Claims priority of application No. 202110602008.5 (CN), filed on May 31, 2021.
Prior Publication US 2023/0207535 A1, Jun. 29, 2023
Int. Cl. H01L 25/07 (2006.01); H01L 25/075 (2006.01); H01L 33/62 (2010.01)
CPC H01L 25/0753 (2013.01) [H01L 33/62 (2013.01); H01L 2933/0066 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light emitting device, comprising:
a first substrate;
a N-type contact layer disposed on the first substrate;
an active layer disposed on the N-type contact layer; and
a P-type contact layer disposed on the active layer;
wherein a first electrode and a second electrode arranged around the first electrode are disposed on the P-type contact layer, in response to the first electrode being an N-type electrode and the second electrode being a P-type electrode, the first electrode is connected to the N-type contact layer through a via hole, or in response to the first electrode being a P-type electrode and the second electrode being an N-type electrode, the second electrode is connected to the N-type contact layer through a via hole; and
wherein a first encapsulation layer is disposed at a side of the second electrode away from the first electrode, and the first encapsulation layer is arranged around the second electrode.