US 12,002,771 B2
Semiconductor device having a passivation layer and method of making
Yu-Lung Shih, Hsinchu (TW); Chao-Keng Li, Hsinchu (TW); Alan Kuo, Hsinchu (TW); C. C. Chang, Hsinchu (TW); and Yi-An Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 13, 2021, as Appl. No. 17/319,641.
Application 16/410,258 is a division of application No. 15/617,405, filed on Jun. 8, 2017, granted, now 10,290,596, issued on May 14, 2019.
Application 17/319,641 is a continuation of application No. 16/410,258, filed on May 13, 2019, granted, now 11,018,100.
Claims priority of provisional application 62/434,243, filed on Dec. 14, 2016.
Prior Publication US 2021/0265292 A1, Aug. 26, 2021
Int. Cl. H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01)
CPC H01L 24/03 (2013.01) [H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/76837 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 24/11 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/1191 (2013.01); H01L 2924/30205 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of making a semiconductor device, the method comprising:
depositing a dielectric layer over a conductive pad using a first deposition process; and
depositing a first passivation layer directly over the dielectric layer using a high density plasma chemical vapor deposition (HDPCVD), wherein the first deposition process is different from HDPCVD.