US 12,002,769 B2
Switch with electrostatic discharge (ESD) protection
Muhammad Hassan, San Diego, CA (US); Bhushan Shanti Asuri, San Diego, CA (US); Jeremy Darren Dunworth, La Jolla, CA (US); and Ravi Sridhara, San Diego, CA (US)
Assigned to QUALCOMM Incorporated, San Diego, CA (US)
Filed by QUALCOMM Incorporated, San Diego, CA (US)
Filed on Apr. 13, 2023, as Appl. No. 18/300,256.
Application 18/300,256 is a continuation of application No. 17/118,253, filed on Dec. 10, 2020, granted, now 11,646,277.
Prior Publication US 2023/0253346 A1, Aug. 10, 2023
Int. Cl. H03F 3/45 (2006.01); H01L 23/60 (2006.01); H03F 3/195 (2006.01); H03F 3/24 (2006.01)
CPC H01L 23/60 (2013.01) [H03F 3/195 (2013.01); H03F 3/245 (2013.01); H03F 2200/318 (2013.01); H03F 2200/441 (2013.01); H03F 2200/451 (2013.01); H03F 2200/541 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A chip, comprising:
a pad;
a power amplifier having a first output and a second output;
a transformer, wherein the transformer comprises:
a first inductor coupled between a first terminal and a second terminal of the transformer, wherein the first terminal is coupled to the first output of the power amplifier, and the second terminal is coupled to the second output of the power amplifier; and
a second inductor coupled between a third terminal and a fourth terminal of the transformer, wherein the third terminal is coupled to the pad;
a first switch coupled to the fourth terminal;
a shunt inductor coupled in parallel with the first switch; and
a low-noise amplifier coupled to the third terminal, wherein the second inductor is coupled between the first switch and an input of the low-noise amplifier.