US 12,002,760 B2
Composite component and method for manufacturing the same
Tatsuya Funaki, Nagaokakyo (JP); and Shunsuke Abe, Nagaokakyo (JP)
Assigned to MURATA MANUFACTURING CO., LTD., Nagaokakyo (JP)
Filed by Murata Manufacturing Co., Ltd., Nagaokakyo (JP)
Filed on Sep. 30, 2021, as Appl. No. 17/490,424.
Application 17/490,424 is a continuation of application No. PCT/JP2020/022841, filed on Jun. 10, 2020.
Claims priority of application No. 2019-117035 (JP), filed on Jun. 25, 2019.
Prior Publication US 2022/0020692 A1, Jan. 20, 2022
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/5382 (2013.01) [H01L 21/485 (2013.01); H01L 21/4853 (2013.01); H01L 21/486 (2013.01); H01L 21/565 (2013.01); H01L 23/295 (2013.01); H01L 23/3121 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A composite component comprising:
an interposer structure that includes:
a Si base layer having a first main surface and a second main surface facing each other,
a rewiring layer on the first main surface,
a through Si via electrically connected to the rewiring layer and penetrating the Si base layer,
an interposer electrode facing the second main surface, and
an adhesive layer; and
an electronic component having a surface and a component electrode on the surface and connected to the through Si via, the electronic component located between the interposer electrode and the Si base layer,
wherein
the component electrode and the surface of the electronic component are adhered to the second main surface of the Si base layer with the adhesive layer interposed therebetween,
the through Si via includes a through Si via main body and an extending portion extending from the second main surface, penetrating the adhesive layer, and electrically connected to the component electrode, and
wherein, a sectional shape of the component electrode in a plane orthogonal to a stacking direction of the composite component is substantially rectangular, a sectional shape of the through Si via in the plane is substantially circular, and a diameter φ of the through Si via satisfies:
T(Si)+(T(A)−H(C))/3≤φ≤r,
wherein T(Si) is a thickness of the Si base layer, T(A) is a thickness of the adhesive layer, H(C) is a height of the component electrode, and r is a diameter of a circle inscribed in the sectional shape of the component electrode at an interface between the through Si via and the component electrode.