US 12,002,724 B2
Power module with metal substrate
Wu Hu Li, Singapore (SG); Raphael Hellwig, Regensburg (DE); Olaf Hohlfeld, Warstein (DE); Martin Mayer, Nittendorf (DE); and Ivan Nikitin, Regensburg (DE)
Assigned to Infineon Technologies Austria AG, Villach (AT)
Filed by Infineon Technologies Austria AG, Villach (AT)
Filed on Jun. 16, 2022, as Appl. No. 17/842,302.
Application 17/842,302 is a division of application No. 16/914,725, filed on Jun. 29, 2020, granted, now 11,404,336.
Prior Publication US 2022/0310465 A1, Sep. 29, 2022
Int. Cl. H01L 23/14 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/142 (2013.01) [H01L 21/486 (2013.01); H01L 21/565 (2013.01); H01L 23/3121 (2013.01); H01L 23/49827 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A power semiconductor module, comprising:
a substrate of planar sheet metal comprising a plurality of islands that are each defined by channels that extend between upper and lower surfaces of the substrate;
a first semiconductor die mounted on a first one of the islands;
a molded body of encapsulant that covers the metal substrate, fills the channels, and encapsulates the first semiconductor die;
a hole in the molded body that extends to a recess in the upper surface of the substrate; and
a press-fit connector arranged in the hole such an interior end of the press-fit connector is mechanically and electrically connected to the substrate,
wherein the channels comprise a ring-shaped channel that surrounds each one of the islands and separates each one of the islands from a peripheral ring of the substrate.