US 12,002,708 B2
Method for forming intermetallic air gap
Xiaoxu Kang, Shanghai (CN); Ruoxi Shen, Shanghai (CN); and Xiaolan Zhong, Shanghai (CN)
Assigned to SHANGHAI IC R&D CENTER CO., LTD., Shanghai (CN); and SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS INDUSTRY INNOVATION CENTER CO., LTD, Shanghai (CN)
Appl. No. 17/613,491
Filed by SHANGHAI IC R&D CENTER CO., LTD., Shanghai (CN); and Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd, Shanghai (CN)
PCT Filed Dec. 4, 2019, PCT No. PCT/CN2019/122974
§ 371(c)(1), (2) Date Nov. 23, 2021,
PCT Pub. No. WO2020/233095, PCT Pub. Date Nov. 26, 2020.
Claims priority of application No. 201910433133.0 (CN), filed on May 23, 2019.
Prior Publication US 2022/0246466 A1, Aug. 4, 2022
Int. Cl. H01L 21/762 (2006.01); H01L 29/06 (2006.01)
CPC H01L 21/76289 (2013.01) [H01L 29/0649 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method for forming an intermetallic air gap, comprising:
S01: forming a trench in a solid dielectric;
S02: preparing an insulating sheet-like two-dimensional material, wherein the insulating sheet-like two-dimensional material comprises an insulating nano sheet-like layer, and the size of the insulating nano sheet-like layer in the sheet-like two-dimensional direction is larger than the size of the trench;
S03: depositing the insulating sheet-shaped two-dimensional material on the solid dielectric and the trench;
S04: annealing the solid dielectric and the insulating sheet-like two-dimensional material to form a stable insulating sheet-like two-dimensional material thin film, thereby forming an intermetallic air gap sealed by the insulating sheet-like two-dimensional material thin film.