US 12,002,684 B2
Methods for chemical mechanical polishing and forming interconnect structure
Ji Cui, Bolingbrook, IL (US); Fu-Ming Huang, Changhua County (TW); Ting-Kui Chang, New Taipei (TW); Tang-Kuei Chang, Tainan (TW); Chun-Chieh Lin, Hsinchu (TW); Wei-Wei Liang, Hsinchu (TW); Liang-Guang Chen, Hsinchu (TW); Kei-Wei Chen, Tainan (TW); Hung Yen, Kaohsiung (TW); Ting-Hsun Chang, Kaohsiung (TW); Chi-Hsiang Shen, Tainan (TW); Li-Chieh Wu, Hsinchu (TW); and Chi-Jen Liu, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Nov. 21, 2022, as Appl. No. 18/057,728.
Application 18/057,728 is a continuation of application No. 16/902,180, filed on Jun. 15, 2020, granted, now 11,508,585.
Prior Publication US 2023/0082084 A1, Mar. 16, 2023
Int. Cl. H01L 21/321 (2006.01); B24B 37/04 (2012.01); B24B 37/10 (2012.01); C09G 1/02 (2006.01)
CPC H01L 21/3212 (2013.01) [B24B 37/044 (2013.01); B24B 37/107 (2013.01); C09G 1/02 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for chemical-mechanical polishing (CMP), comprising:
receiving a metal layer stack in a dielectric structure, wherein the metal layer stack comprises at least a first metal layer and a second metal layer over the first metal layer, and a top surface of the first metal layer and a top surface of the second metal layer being exposed;
forming a protecting layer over the top surface of the second metal layer;
etching a portion of the first metal layer, wherein the protecting layer protects the second metal layer during the etching of the portion of the first metal layer, and a top surface of the etched first metal layer is lower than a top surface of the protecting layer;
removing the protecting layer from the second metal layer; and
removing a portion of the first metal layer, a portion of the second metal layer and a portion of the dielectric structure, wherein a top surface of the first metal layer, a top surface of the second metal layer and a top surface of the dielectric structure form a flush surface.
 
8. A method for chemical-mechanical polishing (CMP), comprising:
forming a first metal layer in a dielectric structure and a second metal layer covering the first metal layer;
removing a portion of the second metal layer to expose the first metal layer;
forming a protecting layer over the second metal layer and etching the first metal layer, wherein a top surface of the etched first metal layer is lower than a top surface of the protecting layer;
removing the protecting layer to expose the second metal layer; and
removing a portion of the first metal layer, a portion of the second metal layer and a portion of the dielectric structure, wherein a top surface of the first metal layer, a top surface of the second metal layer and a top surface of the dielectric structure form a flush surface.