CPC H01J 37/32596 (2013.01) [H01J 37/32357 (2013.01); H01J 37/3244 (2013.01)] | 20 Claims |
1. An apparatus for processing a substrate, comprising:
a process chamber with a chamber body enclosing a processing volume;
a remote plasma source (RPS) having a plasma source with an upper electrode and a lower electrode, wherein the upper electrode and the lower electrode are symmetrical with hollow cavities configured to induce a hollow cathode effect within the hollow cavities, wherein the upper electrode and the lower electrode are electrically separated by a first gap with an annular dielectric cover positioned within the first gap, wherein the annular dielectric cover is in direct contact with the lower electrode and forms a second gap between an uppermost surface of the annular dielectric cover and a lowermost surface of the upper electrode, wherein the annular dielectric cover fills approximately 50% to approximately 95% of a height of the first gap, and wherein the RPS is configured to provide radicals or ions into the processing volume; and
a radio frequency (RF) power source configured to provide a symmetrical driving waveform on the upper electrode and the lower electrode to produce an anodic cycle and a cathodic cycle of the RPS, wherein the anodic cycle and the cathodic cycle operate in a hollow cathode effect mode.
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