US 12,002,536 B2
Sensing module, memory device, and sensing method applied to identify un-programmed/programmed state of non-volatile memory cell
Yun-Chen Chou, Hsinchu (TW); Tien-Yen Wang, Hsinchu (TW); and Chun-Hsiung Hung, Hsinchu (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Mar. 28, 2022, as Appl. No. 17/705,469.
Prior Publication US 2023/0307014 A1, Sep. 28, 2023
Int. Cl. G11C 7/08 (2006.01); G11C 7/06 (2006.01); G11C 17/14 (2006.01)
CPC G11C 7/08 (2013.01) [G11C 7/065 (2013.01); G11C 17/14 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A sensing module, configured to perform a read operation to a memory cell, comprising:
a sensing amplifier, electrically connected to the memory cell at a clamp terminal, configured to generate a sensing current and identify a state of the memory cell based on the sensing current, wherein the clamp terminal is clamped at a low read voltage during the read operation; and
a current sink, electrically connected to the clamp terminal, configured to receive a reference current being equivalent to a summation of the sensing current and a cell current flowing through the memory cell, wherein both the sensing current and the cell current flow to the current sink via the clamp terminal, the reference current is constant, and the sensing current is changed with the cell current,
wherein the cell current is generated based on a high read voltage and the low read voltage being applied to the memory cell, wherein
the sensing current is higher if the memory cell is un-programmed, and
the sensing current is lower if the memory cell is programmed.