CPC G11C 16/3431 (2013.01) [G06F 17/16 (2013.01); G06N 3/063 (2013.01); G11C 11/5628 (2013.01); G11C 11/5635 (2013.01); G11C 11/5642 (2013.01); G11C 16/0416 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); G11C 16/0491 (2013.01); G11C 16/10 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/40117 (2019.08); H01L 29/66833 (2013.01); H01L 29/78633 (2013.01); H01L 29/7926 (2013.01); H01L 29/92 (2013.01); H10B 43/27 (2023.02); H10B 43/10 (2023.02)] | 26 Claims |
1. A 3-dimensional array of NOR memory strings each comprising a plurality of thin-film storage transistors, the 3-dimensional array comprising first and second groups of data pages, each data page having a predetermined number of storage transistors that are programmed, erased, or read simultaneously, wherein each data page in the second group stores resource management data relating to data in one or more corresponding data pages of the first group, and wherein the resource management data in each data page of the second group is stored or updated in conjunction with programming, erasing or reading of data in each corresponding page of the first group.
|