US 12,002,516 B2
Memory block characteristic determination
Zhongyuan Lu, Boise, ID (US); and Niccolo' Righetti, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jun. 2, 2022, as Appl. No. 17/831,350.
Prior Publication US 2023/0395156 A1, Dec. 7, 2023
Int. Cl. G11C 16/16 (2006.01); G11C 7/04 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01); G11C 16/32 (2006.01)
CPC G11C 16/16 (2013.01) [G11C 7/04 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01); G11C 16/32 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A method, comprising:
determining, for a plurality of memory blocks, respective temperatures corresponding to each of the memory blocks;
determining whether a temperature of a first memory block among the plurality of memory blocks meets or exceeds a first threshold operational temperature corresponding to a memory device containing the plurality of memory blocks;
writing information to a particular memory block based on the determination that the temperature of the first memory block meets or exceeds the first threshold operational temperature of the memory device; and
updating the first threshold operational temperature of the memory device to a second threshold operational temperature that is less than the first threshold operational temperature of the memory device based on determining that none of the memory blocks among the plurality of memory blocks meets or exceeds the first threshold operational temperature corresponding to the memory device.