US 12,002,514 B2
Nonvolatile memory and storage device including same
Sang-Won Park, Seoul (KR); Won-Taeck Jung, Hwaseong-si (KR); Han-Jun Lee, Seoul (KR); and Su Chang Jeon, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 28, 2022, as Appl. No. 17/706,097.
Claims priority of application No. 10-2021-0152265 (KR), filed on Nov. 8, 2021.
Prior Publication US 2023/0145750 A1, May 11, 2023
Int. Cl. G11C 8/12 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/10 (2013.01) [G11C 16/0483 (2013.01); G11C 16/3459 (2013.01); G11C 8/12 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A nonvolatile memory comprising:
a first memory cell array including a first selection transistor connected to a first string selection line;
a second memory cell array including a second selection transistor connected to a second string selection line and spaced apart from the first string selection line by a first cutting line; and
a peripheral circuit configured to;
provide a first program voltage to the first selection transistor,
provide a second program voltage to the second selection transistor different from the first program voltage,
program the first selection transistor with a first threshold voltage in response to the first program voltage, and
program the second selection transistor with a second threshold voltage level greater than the first threshold voltage in response to the second program voltage.