US 12,001,709 B2
Storage devices and operating methods of storage controllers
Chanha Kim, Hwaseong-si (KR); Gyeongmin Nam, Seoul (KR); and Seungryong Jang, Gyeonggi-do (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Feb. 28, 2022, as Appl. No. 17/682,084.
Claims priority of application No. 10-2021-0100138 (KR), filed on Jul. 29, 2021.
Prior Publication US 2023/0036616 A1, Feb. 2, 2023
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0655 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A storage device comprising:
a non-volatile memory comprising a plurality of memory blocks including a first block and a second block, wherein the first block includes first memory cells each configured to store N-bit data, and the second block includes second memory cells each configured to store M-bit data; and
a storage controller configured to, during a read reclaim operation on the first block, determine read hot data from among a plurality of pieces of data stored in the first block and write the determined read hot data in the second block,
wherein the storage controller comprises a hot data determiner configured to, during the read reclaim operation, select a first word line that corresponds to a first page in which a number of error bits is equal to or greater than a threshold value from among pages of the first block and select a third word line that corresponds to a second page in which a number of error bits is equal to or greater than the threshold value from among the pages of the first block, the first and second page corresponding to a first string select line, and the hot data determiner configured to determine, as the read hot data, data stored in at least one page that corresponds to a second word line that is adjacent to the first word line and between the first word line and the third word line and corresponding to a second string select line that is adjacent to the first string select line, and
wherein N and M are positive integers and N is greater than M.