US 12,001,699 B2
Memory device performing configurable mode setting and method of operating the same
Youngcheon Kwon, Hwaseong-si (KR); Jaesan Kim, Suwon-si (KR); Jemin Ryu, Seoul (KR); Jaeyoun Youn, Seoul (KR); and Haesuk Lee, Seongnam-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Dec. 22, 2022, as Appl. No. 18/145,186.
Application 18/145,186 is a continuation of application No. 17/335,307, filed on Jun. 1, 2021, granted, now 11,561,711.
Claims priority of application No. 10-2020-0114045 (KR), filed on Sep. 7, 2020.
Prior Publication US 2023/0138048 A1, May 4, 2023
Int. Cl. G06F 3/06 (2006.01); G11C 7/10 (2006.01); G11C 7/22 (2006.01); H01L 25/18 (2023.01)
CPC G06F 3/0634 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G11C 7/1069 (2013.01); G11C 7/222 (2013.01); H01L 25/18 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An operating method of a memory device including a memory cell array including a first bank region and a second bank region, the operating method comprising:
receiving, at the memory device, a first active command and first address information;
setting, using a mode controller, a mode of the first bank region to an operation mode based on decoding the first active command and the first address information;
enabling, using a first mode signal generator, one or more first processing elements (PEs) corresponding to the first bank region;
disabling, using a second mode signal generator, one or more second PEs corresponding to the second bank region; and
performing an operation for the first bank region by the enabled one or more first PEs,
wherein, while the first bank region is operated in the operation mode, the second bank region is operated in a normal mode.