US 12,001,686 B2
Apparatus with post-manufacturing data update mechanism and methods for operating the same
William C. Filipiak, Northville, MI (US); Elancheren Durai, Boise, ID (US); Quincy R. Holton, Kuna, ID (US); Adam Satar, Northville, MI (US); Brett Hunter, White Lake, MI (US); and David R. Silwanowicz, Macomb, MI (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 14, 2022, as Appl. No. 17/865,203.
Prior Publication US 2024/0020018 A1, Jan. 18, 2024
Int. Cl. G06F 1/00 (2006.01); G06F 3/06 (2006.01); G11C 7/04 (2006.01); G11C 11/406 (2006.01); G11C 16/34 (2006.01)
CPC G06F 3/0619 (2013.01) [G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 7/04 (2013.01); G11C 11/40626 (2013.01); G11C 16/3418 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a memory array including rewritable memory cells configured to store initial levels of charges representative of preloaded data prior to an environmental stimulus; and
a memory controller operably coupled to the memory array and configured to—
dynamically generate a shift measure based on scanning the rewritable memory cells using a scan-read position,
wherein the shift measure represents one or more changes in the initial levels of the stored charges caused by the environmental stimulus,
wherein the scanning level is a threshold voltage that is offset by a scanning offset from an initial read position predetermined for reading the preloaded data; and
implement a preload adjustment mechanism based on the dynamically generated shift measure, wherein the preload adjustment mechanism is configured to address the one or more changes in the initial levels and maintain accessibility for the preloaded data, wherein the preload adjustment mechanism is configured to selectively generate a post-deployment message for notifying a user that the preloaded data requires refreshing after the environmental stimulus.