US 12,001,680 B2
Utilizing last successful read voltage level in memory access operations
Kyungjin Kim, San Jose, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by MICRON TECHNOLOGY, INC., Boise, ID (US)
Filed on Aug. 24, 2022, as Appl. No. 17/894,540.
Prior Publication US 2024/0069734 A1, Feb. 29, 2024
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0611 (2013.01) [G06F 3/0655 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
responsive to receiving a read error associated with a read operation performed on a memory page of a memory device,
determining, by performing an error correction operation, a new read voltage level associated with a block family of the memory page of the memory device;
storing the new read voltage level as a last successful read voltage level in a record of a last successful read voltage level memory data structure associated with the block family;
responsive to receiving a request to perform a subsequent read operation with respect to the memory page, retrieving the last successful read voltage level from the record of the last successful read voltage level memory data structure associated with the block family of the memory page; and
performing, using the retrieved last successful read voltage level, the subsequent read operation with respect to the memory page.