US 12,001,349 B2
Storage device including regions of different densities and operation method thereof
Chanha Kim, Hwaseong-si (KR); Gyeongmin Nam, Seoul (KR); and Seungryong Jang, Yangpyeong-gun (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jun. 29, 2022, as Appl. No. 17/853,227.
Claims priority of application No. 10-2021-0143295 (KR), filed on Oct. 26, 2021.
Prior Publication US 2023/0126807 A1, Apr. 27, 2023
Int. Cl. G06F 12/14 (2006.01); G06F 12/0882 (2016.01); G06F 12/123 (2016.01)
CPC G06F 12/145 (2013.01) [G06F 12/0882 (2013.01); G06F 12/123 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A storage device comprising:
a memory device including a first memory region having a lowest bit density, a second memory region having a medium bit density, and a third memory region having a highest bit density; and
a controller configured to control the memory device,
wherein the controller is configured to determine data, from a host, as being any one of hot data, warm data and cold data based on a degree of hotness of the data, is configured to store the hot data in the first memory region, is configured to store the warm data in the second memory region, is configured to store the cold data in the third memory region, is configured to select a source block of first memory blocks included in the first memory region, is configured to select destination blocks in each of the second and third memory regions, and is configured to migrate each piece of unit data stored in the source block to the destination blocks of the second or third memory regions according to a degree of hotness of each piece of the unit data, and
wherein the controller is configured to determine the degree of hotness of each piece of the unit data based on reception frequencies of logical addresses corresponding to each piece of the unit data, from the host, and recency of the logical addresses.