US 12,001,241 B2
Portable electronic device having transistor comprising oxide semiconductor
Shunpei Yamazaki, Setagaya (JP); and Jun Koyama, Sagamihara (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Dec. 16, 2022, as Appl. No. 18/082,679.
Application 14/477,119 is a division of application No. 13/005,775, filed on Jan. 13, 2011, granted, now 8,830,661, issued on Sep. 9, 2014.
Application 18/082,679 is a continuation of application No. 16/953,511, filed on Nov. 20, 2020, granted, now 11,573,601.
Application 16/953,511 is a continuation of application No. 15/679,347, filed on Aug. 17, 2017, granted, now 10,845,846, issued on Nov. 24, 2020.
Application 15/679,347 is a continuation of application No. 14/477,119, filed on Sep. 4, 2014, granted, now 9,740,241, issued on Aug. 22, 2017.
Claims priority of application No. 2010-010382 (JP), filed on Jan. 20, 2010.
Prior Publication US 2023/0121832 A1, Apr. 20, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/786 (2006.01); G06F 1/16 (2006.01); G06F 1/26 (2006.01); G11C 5/06 (2006.01)
CPC G06F 1/1635 (2013.01) [G06F 1/1626 (2013.01); G06F 1/1637 (2013.01); G06F 1/263 (2013.01); G11C 5/063 (2013.01); H01L 29/786 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a display;
a first antenna;
a second antenna;
a memory; and
a rechargeable battery,
wherein the first antenna is capable of receiving electric power by contactless charge,
wherein the rechargeable battery is capable of storing the electric power received by the first antenna,
wherein the second antenna is capable of receiving data,
wherein the memory comprises a first transistor, a second transistor and a capacitor,
wherein a gate of the second transistor is electrically connected to one of a source and a drain of the first transistor and one terminal of the capacitor,
wherein the first transistor comprises an oxide semiconductor, and
wherein the second transistor comprises silicon.