US 12,001,138 B2
Composition for forming silicon-containing resist underlayer film and patterning process
Yusuke Kai, Joetsu (JP); Takeru Watanabe, Joetsu (JP); Yusuke Biyajima, Joetsu (JP); and Tsutomu Ogihara, Joetsu (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed by SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed on Aug. 24, 2020, as Appl. No. 17/000,566.
Claims priority of application No. 2019-169969 (JP), filed on Sep. 19, 2019.
Prior Publication US 2021/0088908 A1, Mar. 25, 2021
Int. Cl. G03F 7/004 (2006.01); C08G 77/04 (2006.01); C08G 77/16 (2006.01); C08G 77/18 (2006.01); C08G 77/26 (2006.01); C09D 183/04 (2006.01); C09D 183/06 (2006.01); C09D 183/08 (2006.01); G03F 7/095 (2006.01); G03F 7/11 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01)
CPC G03F 7/0045 (2013.01) [C08G 77/04 (2013.01); C08G 77/16 (2013.01); C08G 77/18 (2013.01); C08G 77/26 (2013.01); C09D 183/04 (2013.01); C09D 183/06 (2013.01); C09D 183/08 (2013.01); G03F 7/004 (2013.01); G03F 7/095 (2013.01); G03F 7/11 (2013.01); H01L 21/0274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01)] 16 Claims
 
1. A composition for forming a silicon-containing resist underlayer film, comprising at least:
one or more kinds of a quaternary ammonium salt having an organic or inorganic anion as a counterion of a quaternary ammonium cation selected from the group consisting of cations shown by the formulae below:

OG Complex Work Unit Chemistry

OG Complex Work Unit Chemistry
a thermally crosslinkable polysiloxane (Sx); and
an acid generator, wherein the acid generator is a sulfonium salt which is a photoacid generator and generates an acid by an action of a high energy beam.