CPC G03F 7/0045 (2013.01) [C08G 77/04 (2013.01); C08G 77/16 (2013.01); C08G 77/18 (2013.01); C08G 77/26 (2013.01); C09D 183/04 (2013.01); C09D 183/06 (2013.01); C09D 183/08 (2013.01); G03F 7/004 (2013.01); G03F 7/095 (2013.01); G03F 7/11 (2013.01); H01L 21/0274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01)] | 16 Claims |
1. A composition for forming a silicon-containing resist underlayer film, comprising at least:
one or more kinds of a quaternary ammonium salt having an organic or inorganic anion as a counterion of a quaternary ammonium cation selected from the group consisting of cations shown by the formulae below:
![]() ![]() a thermally crosslinkable polysiloxane (Sx); and
an acid generator, wherein the acid generator is a sulfonium salt which is a photoacid generator and generates an acid by an action of a high energy beam.
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