US 12,000,883 B2
Semiconductor device and power conversion device
Yukihiko Wada, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 17/606,048
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Jun. 25, 2019, PCT No. PCT/JP2019/025170
§ 371(c)(1), (2) Date Oct. 25, 2021,
PCT Pub. No. WO2020/261385, PCT Pub. Date Dec. 30, 2020.
Prior Publication US 2022/0206057 A1, Jun. 30, 2022
Int. Cl. G01R 31/26 (2020.01); G01R 31/28 (2006.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01); H01L 29/739 (2006.01); H02M 1/08 (2006.01); H02M 7/5387 (2007.01); H02P 27/08 (2006.01)
CPC G01R 31/2608 (2013.01) [G01R 31/2619 (2013.01); G01R 31/2642 (2013.01); G01R 31/2853 (2013.01); H01L 23/49562 (2013.01); H01L 24/48 (2013.01); H01L 29/7393 (2013.01); H02M 1/08 (2013.01); H02M 7/53871 (2013.01); H01L 2224/48175 (2013.01); H02P 27/08 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a power semiconductor element;
a collector substrate electrically connected to the power semiconductor element;
a collector main terminal electrically connected to the collector substrate;
an emitter main terminal connected to an emitter electrode surface of the power semiconductor element by a plurality of first bonding wires;
an emitter reference terminal connected to the emitter electrode surface of the power semiconductor element by a second bonding wire;
a first voltage measuring circuit to measure a first voltage that is a difference between a potential at the collector main terminal and a potential at the emitter main terminal;
a second voltage measuring circuit to measure a second voltage that is a difference between a potential at the emitter reference terminal and a potential at the emitter main terminal; and
a deteriorated section identifier to refer to correspondence information that defines a deteriorated section of a plurality of bonding sections to the emitter electrode surface to which the first bonding wires are connected, for a combination of temporal change of the first voltage and temporal change of the second voltage, and to identify the deteriorated section corresponding to a combination of temporal change of the first voltage measured by the first voltage measuring circuit and temporal change of the second voltage measured by the second voltage measuring circuit.