US 12,000,060 B2
Semiconductor crystal growth method and device
Weimin Shen, Shanghai (CN); Gang Wang, Shanghai (CN); Hanyi Huang, Shanghai (CN); and Yun Liu, Shanghai (CN)
Assigned to ZING SEMICONDUCTOR CORPORATION, Shanghai (CN)
Appl. No. 17/606,694
Filed by ZING SEMICONDUCTOR CORPORATION, Shanghai (CN)
PCT Filed Jan. 16, 2020, PCT No. PCT/CN2020/072501
§ 371(c)(1), (2) Date Oct. 26, 2021,
PCT Pub. No. WO2020/220766, PCT Pub. Date Nov. 5, 2020.
Claims priority of application No. 201910357352.5 (CN), filed on Apr. 29, 2019.
Prior Publication US 2022/0213614 A1, Jul. 7, 2022
Int. Cl. C30B 15/14 (2006.01); C30B 15/10 (2006.01); C30B 15/20 (2006.01); C30B 29/06 (2006.01)
CPC C30B 15/14 (2013.01) [C30B 15/10 (2013.01); C30B 15/20 (2013.01); C30B 29/06 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method for ensuring stability of parameters in a crystal pulling process, comprising:
obtaining an initial position CP0 of a graphite crucible when used in a semiconductor crystal growth process for a first time;
obtaining a current production batch N of the graphite crucible, the current production batch N characterizing that the graphite crucible currently performs a semiconductor crystal growth process for a Nth;
determining a total weight W(N) of polysilicon raw materials to be loaded into a quartz crucible sleeved in the graphite crucible based on the current production batch N, wherein the total weight W(N) of polysilicon raw materials enables to keep an initial position of liquid surface of a silicon melt in the quartz crucible stable while keeping the initial position CP0 of the graphite crucible unchanged, and wherein the determining a total weight W(N) of polysilicon raw materials to be loaded into a quartz crucible sleeved in the graphite crucible further comprises:
obtaining a charging amount W(1) of polysilicon raw materials loaded in the quartz crucible for the first time of the semiconductor growth process,
determining an increase of charging amount dW to be increased in the quartz crucible for the Nth time of the semiconductor growth process, and
computing a sum of the charging amount W(1) and the increase of charging amount dW to obtain the total weight W(N); and
loading the total weight W(N) of polysilicon raw materials into the quartz crucible sleeved in the graphite crucible to keep the initial position of liquid surface of the silicon melt in the quartz crucible stable while keeping the initial position CP0 of the graphite crucible unchanged.