US 11,999,887 B2
Core shell quantum dot, production method thereof, and electronic device including the same
Jihyun Min, Seoul (KR); Sungwoo Hwang, Suwon-si (KR); Yong Wook Kim, Yongin-si (KR); Ji-Yeong Kim, Suwon-si (KR); Soo Kyung Kwon, Suwon-si (KR); and Seon-Yeong Kim, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 13, 2023, as Appl. No. 18/182,428.
Application 18/182,428 is a continuation of application No. 17/072,440, filed on Oct. 16, 2020, granted, now 11,603,493.
Claims priority of application No. 10-2019-0129447 (KR), filed on Oct. 17, 2019; and application No. 10-2020-0117036 (KR), filed on Sep. 11, 2020.
Prior Publication US 2023/0220279 A1, Jul. 13, 2023
Int. Cl. C09K 11/88 (2006.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01); C01B 19/00 (2006.01); C01G 9/08 (2006.01); C09K 11/56 (2006.01); F21V 8/00 (2006.01); H10K 50/115 (2023.01); H10K 59/12 (2023.01); H10K 59/38 (2023.01)
CPC C09K 11/883 (2013.01) [C01B 19/00 (2013.01); C01G 9/08 (2013.01); C09K 11/565 (2013.01); H10K 50/115 (2023.02); H10K 59/12 (2023.02); H10K 59/38 (2023.02); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C01P 2002/74 (2013.01); C01P 2006/60 (2013.01); G02B 6/005 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A quantum dot comprising a semiconductor nanocrystal,
wherein the semiconductor nanocrystal comprises zinc, tellurium, and selenium,
wherein the quantum dot further comprises sulfur, and
wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for a Te oxide to a peak area for Te3d5/2 as an area percentage is less than or equal to about 25%.