US 11,999,616 B2
Dielectric thin film, capacitor element, and electronic circuit board
Kumiko Yamazaki, Tokyo (JP); Wakiko Sato, Tokyo (JP); and Junichi Yamazaki, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Appl. No. 17/269,698
Filed by TDK CORPORATION, Tokyo (JP)
PCT Filed Aug. 27, 2019, PCT No. PCT/JP2019/033545
§ 371(c)(1), (2) Date Feb. 19, 2021,
PCT Pub. No. WO2020/045447, PCT Pub. Date Mar. 5, 2020.
Claims priority of application No. 2018-163799 (JP), filed on Aug. 31, 2018.
Prior Publication US 2021/0238037 A1, Aug. 5, 2021
Int. Cl. C01B 21/082 (2006.01); C01G 35/00 (2006.01); C23C 14/06 (2006.01); H01G 4/12 (2006.01); H01G 4/30 (2006.01); H01G 4/33 (2006.01); H01L 49/02 (2006.01); H05K 1/16 (2006.01)
CPC C01B 21/0821 (2013.01) [C01G 35/006 (2013.01); C23C 14/0676 (2013.01); H01G 4/1218 (2013.01); H01G 4/1254 (2013.01); H01G 4/306 (2013.01); H01G 4/33 (2013.01); H01L 28/40 (2013.01); H05K 1/162 (2013.01); C01P 2002/72 (2013.01); C01P 2006/40 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A capacitor element comprising a dielectric thin film, wherein
the dielectric thin film consists of an A-B—O—N oxynitride, in which the A-B—O—N oxynitride is represented by a compositional formula of AaBbOoNn that satisfies (o+n)/a<3.00,
A and B are elements capable of forming an A-B—O oxide having a perovskite structure,
A is one or more selected from Sr, Ba, Ca, La, Nd, Na, and K; and B is one or more selected from Ta, Nb, Ti, and W, and
a crystal structure of the A-B—O—N oxynitride is a non-perovskite structure.