CPC C01B 21/0821 (2013.01) [C01G 35/006 (2013.01); C23C 14/0676 (2013.01); H01G 4/1218 (2013.01); H01G 4/1254 (2013.01); H01G 4/306 (2013.01); H01G 4/33 (2013.01); H01L 28/40 (2013.01); H05K 1/162 (2013.01); C01P 2002/72 (2013.01); C01P 2006/40 (2013.01)] | 6 Claims |
1. A capacitor element comprising a dielectric thin film, wherein
the dielectric thin film consists of an A-B—O—N oxynitride, in which the A-B—O—N oxynitride is represented by a compositional formula of AaBbOoNn that satisfies (o+n)/a<3.00,
A and B are elements capable of forming an A-B—O oxide having a perovskite structure,
A is one or more selected from Sr, Ba, Ca, La, Nd, Na, and K; and B is one or more selected from Ta, Nb, Ti, and W, and
a crystal structure of the A-B—O—N oxynitride is a non-perovskite structure.
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