US 12,324,357 B2
Voltage-controlled three-terminal magnon transistor, and control and preparation method thereof
Haifeng Ding, Nanjing (CN); Bingfeng Miao, Nanjing (CN); Jun Cheng, Nanjing (CN); Rui Yu, Nanjing (CN); and Liang Sun, Nanjing (CN)
Assigned to Nanjing University, Nanjing (CN)
Appl. No. 18/837,220
Filed by Nanjing University, Nanjing (CN)
PCT Filed Nov. 7, 2023, PCT No. PCT/CN2023/130196
§ 371(c)(1), (2) Date Aug. 9, 2024,
PCT Pub. No. WO2025/076896, PCT Pub. Date Apr. 17, 2025.
Claims priority of application No. 202311326693.9 (CN), filed on Oct. 13, 2023.
Prior Publication US 2025/0127062 A1, Apr. 17, 2025
Int. Cl. H10N 50/20 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/20 (2023.02) [H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A voltage-controlled three-terminal magnon transistor, comprising:
a ferroelectric layer;
a magnetic layer formed on a first surface of the ferroelectric layer;
a generation terminal, a control terminal, and a detection terminal, wherein the generation terminal, the control terminal, and the detection terminal are formed on the magnetic layer, and the detection terminal is made of a heavy metal material; and
a bottom electrode formed on a second surface of the ferroelectric layer, wherein the second surface is arranged opposite to the first surface;
wherein the generation terminal is further configured to generate a magnon in the magnetic layer based on a thermal effect after a current is inputted;
the detection terminal is further configured to convert the magnon in the magnetic layer into a charge flow based on a strong spin-orbit coupling effect of the detection terminal;
the ferroelectric layer is further configured to change non-volatile polarization and non-volatile strain states of the ferroelectric layer when a voltage pulse applied between the control terminal and the bottom electrode exceeds a critical value, and further affect a transmission capability of the magnon in the magnetic layer based on a magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer; and
the detection terminal is further configured to enable a detected voltage signal to exhibit a regular loop change behavior with a change of the voltage pulse.