US 12,324,323 B2
Light-emitting display apparatus
Hyunseok Na, Gyeonggi-do (KR); Sanggil Kim, Gyeonggi-do (KR); JaeJun Ahn, Gumi-si (KR); Hyoungsun Park, Seoul (KR); and ChangSuk Hyun, Gyeonggi-do (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Apr. 9, 2024, as Appl. No. 18/630,551.
Application 18/630,551 is a continuation of application No. 18/146,029, filed on Dec. 23, 2022, granted, now 11,980,066.
Claims priority of application No. 10-2022-0025905 (KR), filed on Feb. 28, 2022.
Prior Publication US 2024/0268162 A1, Aug. 8, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/041 (2006.01); G06F 3/044 (2006.01); H10K 50/844 (2023.01); H10K 59/121 (2023.01); H10K 59/126 (2023.01); H10K 59/40 (2023.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01)
CPC H10K 59/126 (2023.02) [G06F 3/0412 (2013.01); G06F 3/0443 (2019.05); H10K 50/844 (2023.02); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/40 (2023.02); H10D 30/6731 (2025.01); H10D 30/6745 (2025.01); H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/471 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A light-emitting display apparatus, comprising:
a flexible substrate including a first region and a second region;
a first thin-film transistor disposed in the first region of the flexible substrate, and including a first semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode;
a second thin-film transistor disposed in the second region of the flexible substrate, and including a second semiconductor layer, a second gate electrode, a second source electrode, and a second drain electrode;
at least one insulating layer between the first semiconductor layer and the second semiconductor layer;
a first blocking layer below the first semiconductor layer;
a second blocking layer below the second semiconductor layer;
a light-emitting element layer on the first thin-film transistor and the second thin-film transistor; and
a color filter disposed on the light-emitting element layer;
wherein a vertical distance between the second semiconductor layer and the second blocking layer is different from a vertical distance between the first semiconductor layer and the first blocking layer.