US 12,324,287 B2
Display apparatus using semiconductor light emitting device
Jaewon Chang, Seoul (KR); and Soohyun Kim, Seoul (KR)
Assigned to LG ELECTRONICS INC., Seoul (KR)
Appl. No. 17/631,204
Filed by LG ELECTRONICS INC., Seoul (KR)
PCT Filed Aug. 27, 2019, PCT No. PCT/KR2019/095032
§ 371(c)(1), (2) Date Jan. 28, 2022,
PCT Pub. No. WO2021/025243, PCT Pub. Date Feb. 11, 2021.
Claims priority of application No. 10-2019-0095358 (KR), filed on Aug. 6, 2019.
Prior Publication US 2022/0278260 A1, Sep. 1, 2022
Int. Cl. H01L 21/78 (2006.01); H01L 25/075 (2006.01); H10H 20/857 (2025.01)
CPC H10H 20/857 (2025.01) [H01L 25/0753 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A display device of an active matrix type, the display device comprising:
a substrate;
a pixel region layer arranged on the substrate and including a multitude of pixel regions each including a light emitting region and a pixel transistor region; and
an assembly wiring layer including a multitude of pairs of assembly wiring provided between the substrate and the pixel region layer,
wherein for each pixel region, a corresponding pixel transistor region is positioned at a first direction with respect to a corresponding light emitting region and is configured to cause a corresponding semiconductor light emitting element of the light emitting region to be turned on, and
wherein the assembly wiring layer is disposed to induce a Dielectrophoresis (DEP) effect by an electric field,
wherein each of the multitude of pairs of assembly wiring is arranged along a second direction different from the first direction such that the region of the assembly wiring layer does not overlap with the pixel transistor region.