| CPC H10H 20/825 (2025.01) [H10H 20/01335 (2025.01); H10H 20/812 (2025.01); H10H 20/818 (2025.01)] | 11 Claims |
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1. A nitride semiconductor ultraviolet light-emitting element comprising:
a light-emitting element structure part in which an n-type layer, an active layer, and a p-type layer made of an AlGaN-based semiconductor of wurtzite structure are stacked vertically, wherein
the nitride semiconductor ultraviolet light-emitting element has a peak emission wavelength within a range of 300 nm to 327 nm,
the n-type layer is composed of an n-type AlGaN-based semiconductor,
the active layer disposed between the n-type layer and the p-type layer has a quantum-well structure having one or more well layers composed of a GaN-based semiconductor,
the p-type layer is composed of a p-type AlGaN-based semiconductor,
each semiconductor layer in the n-type layer and the active layer is an epitaxially grown layer having a surface on which multi-step terraces parallel to a (0001) plane are formed,
the n-type layer has a plurality of first Ga-rich regions, the plurality of first Ga-rich regions being stratiform regions uniformly distributed in the n-type layer with locally lower AlN mole fraction and including n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al1Ga1N2,
each extending direction of the first Ga-rich regions on a first plane perpendicular to an upper surface of the n-type layer is inclined with respect to an intersection line between the upper surface of the n-type layer and the first plane, and
an AlN mole fraction of an n-type body region outside the stratiform regions in the n-type layer is within a range of 54% to 66%.
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