| CPC H10H 20/812 (2025.01) [H01L 25/0753 (2013.01); H10H 20/0137 (2025.01); H10H 20/816 (2025.01); H10H 20/821 (2025.01); H10H 20/8215 (2025.01); H10H 20/825 (2025.01)] | 20 Claims |
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1. An optoelectronic semiconductor chip comprising:
a semiconductor layer sequence comprising:
a first semiconductor region of a first conductivity type;
an active zone configured to generate radiation, the active zone having a multiple quantum well structure composed of a plurality of quantum well layers and barrier layers;
a second semiconductor region of a second conductivity type; and
a plurality of channels extending through the active zone and being different and distinct from the active zone,
wherein the active zone lies between the first semiconductor region and the second semiconductor region as seen along a main growth direction of the semiconductor layer sequence,
wherein the second semiconductor region is located in the channels and is configured for lateral current injection into the active zone,
wherein the channels have a first aperture half-angle in the first semiconductor region and a second aperture half-angle in the active zone, and
wherein the second aperture half-angle is greater than zero and less than the first aperture half-angle.
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