US 12,324,256 B2
Image sensor
Jung Wook Lim, Suwon-si (KR); Joong Seok Park, Suwon-si (KR); and Dong Suk Yoo, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Feb. 2, 2023, as Appl. No. 18/104,877.
Claims priority of application No. 10-2022-0059500 (KR), filed on May 16, 2022.
Prior Publication US 2023/0369375 A1, Nov. 16, 2023
Int. Cl. H10F 39/18 (2025.01); H04N 25/59 (2023.01); H04N 25/76 (2023.01); H10F 39/00 (2025.01)
CPC H10F 39/18 (2025.01) [H04N 25/59 (2023.01); H04N 25/7795 (2023.01); H10F 39/8037 (2025.01)] 19 Claims
OG exemplary drawing
 
1. An image sensor comprising:
a photodiode;
a transmission transistor having a first end connected to the photodiode and a second end connected to a first node;
a first switching transistor having a first end connected to the first node;
a first capacitor having a first electrode connected to a second end of the first switching transistor; and
a second capacitor having a first electrode connected to the first node,
wherein a second electrode of the first capacitor is configured to receive a power voltage, and
a second electrode of the second capacitor is configured to receive a boosting signal.