US 12,324,252 B1
Structures including a photodetector and multiple cathode contacts
Francesco Gramuglia, Augsburg (DE); and Eng Huat Toh, Singapore (SG)
Assigned to GlobalFoundries Singapore Pte. Ltd., Singapore (SG)
Filed by GlobalFoundries Singapore Pte. Ltd., Singapore (SG)
Filed on Apr. 29, 2024, as Appl. No. 18/649,247.
Int. Cl. H10F 30/225 (2025.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10F 71/00 (2025.01)
CPC H10F 30/225 (2025.01) [H01L 23/5283 (2013.01); H01L 23/53271 (2013.01); H10F 71/121 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A structure comprising:
a semiconductor layer having a device region and a top surface, the device region having a perimeter;
a photodetector including a first well in the device region and a second well, the first well between the second well and the top surface;
a deep trench isolation region that extends from the top surface into the semiconductor layer, the deep trench isolation region surrounding the perimeter of the device region, and the deep trench isolation region comprising a dielectric material; and
a first metal layer in the semiconductor layer, the first metal layer extending from the top surface of the semiconductor layer to the second well, the first metal layer having a first end portion that projects beyond the dielectric material of the deep trench isolation region and into the second well, and the first metal layer having a first discrete position about the perimeter of the device region.