US 12,324,251 B2
Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method
Denis Rideau, Grenoble (FR); Dominique Golanski, Gieres (FR); Alexandre Lopez, Eindhoven (NL); and Gabriel Mugny, Grenoble (FR)
Assigned to STMicroelectronics (Crolles 2) SAS, Crolles (FR); and STMicroelectronics (Research & Development) Limited, Marlow (GB)
Filed by STMicroelectronics (Crolles 2) SAS, Crolles (FR); and STMicroelectronics (Research & Development) Limited, Marlow (GB)
Filed on Feb. 27, 2024, as Appl. No. 18/588,656.
Application 18/588,656 is a continuation of application No. 17/546,503, filed on Dec. 9, 2021, granted, now 11,949,035.
Claims priority of application No. 2012999 (FR), filed on Dec. 10, 2020.
Prior Publication US 2024/0194815 A1, Jun. 13, 2024
Int. Cl. H10F 30/225 (2025.01); H10F 71/00 (2025.01); H10F 77/14 (2025.01)
CPC H10F 30/225 (2025.01) [H10F 71/00 (2025.01); H10F 77/148 (2025.01)] 23 Claims
OG exemplary drawing
 
1. A method for manufacturing an integrated circuit including a single photon avalanche diode (SPAD), comprising:
implanting a first region doped with a first type of dopant in a semiconductor well doped with the first type of dopant;
implanting a second region doped with a second type of dopant opposite to the first type of dopant in the semiconductor well;
wherein the first and second regions form a PN junction of the SPAD;
wherein implanting the second region comprises implanting the second doped region at a surface of the semiconductor well and at a position that is centered in a photosensitive area of the SPAD; and
wherein implanting the first region comprises forming local variations in dopant concentration and further comprises:
a first implanting of a first volume at a position centered at a depth in contact with a bottom of the second region; and
a second implanting of a second volume laterally annularly surrounding the first volume and at a depth remote from the second doped region but joining the depth of the first volume, wherein the second implanting further comprises implanting a pattern inside the first volume.