US 12,324,230 B2
Semiconductor device and method
Hsi-Jung Wu, Kaohsiung (TW); Sheng-Fu Yu, Chiayi (TW); Ru-Shang Hsiao, Jhubei (TW); and Ying-Hsin Lu, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Nov. 23, 2021, as Appl. No. 17/534,038.
Claims priority of provisional application 63/136,880, filed on Jan. 13, 2021.
Prior Publication US 2022/0223590 A1, Jul. 14, 2022
Int. Cl. H10D 84/83 (2025.01); H01L 21/762 (2006.01); H10D 30/01 (2025.01)
CPC H10D 84/834 (2025.01) [H01L 21/762 (2013.01); H10D 30/024 (2025.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a plurality of fin structures extending from a substrate, the plurality of fin structures having a plurality of first fin structures and a plurality of second fin structures;
a plurality of isolation regions on the substrate and disposed between the plurality of fin structures;
a plurality of gate structures on the plurality of isolation regions;
a plurality of epitaxy structures on one of the plurality of first fin structures, each of the plurality of epitaxy structures being on three first fin structures, the three first fin structures having two different distances between adjacent fin structures of the first fin structures;
a plurality of contact structures on the plurality of epitaxy structures, wherein the plurality of first fin structures, the plurality of gate structures, the plurality of epitaxy structures, and the plurality of contact structures are components of one or more resonators; and
wherein one of the three of first fin structures has a first sidewall facing a first direction and a second sidewall facing a second direction, the second direction being opposite the first direction, the first sidewall being separated from a nearest fin structure in the first direction by a first distance of the two different distances, the second sidewall being separated from a nearest fin structure in the second direction by a second distance of the two different distances, the second distance being different than the first distance.