US 12,324,227 B2
Heterojunction bipolar transistor with buried trap rich isolation region
Vibhor Jain, Williston, VT (US); John J. Ellis-Monaghan, Grand Isle, VT (US); Anthony K. Stamper, Burlington, VT (US); Steven M. Shank, Jericho, VT (US); and John J. Pekarik, Underhill, VT (US)
Assigned to GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed by GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed on Aug. 8, 2023, as Appl. No. 18/231,510.
Application 18/231,510 is a division of application No. 17/075,056, filed on Oct. 20, 2020, granted, now 11,791,334.
Prior Publication US 2023/0402453 A1, Dec. 14, 2023
Int. Cl. H01L 27/08 (2006.01); H10D 10/80 (2025.01); H10D 62/10 (2025.01); H10D 84/60 (2025.01)
CPC H10D 84/645 (2025.01) [H10D 10/80 (2025.01); H10D 62/114 (2025.01); H10D 84/611 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A structure, comprising:
a first bipolar heterojunction transistor;
a second bipolar heterojunction transistor;
a field effect transistor adjacent to the second bipolar heterojunction transistor;
shallow trench isolation structures separating the first bipolar heterojunction transistor from the second bipolar heterojunction transistor and the second bipolar heterojunction transistor from the field effect transistor;
a trap rich isolation region under the first bipolar heterojunction transistor, the second bipolar heterojunction transistor and the field effect transistor, under the shallow trench isolation structures; and
an implanted isolation region extending underneath the trap rich isolation region and the second bipolar heterojunction transistor, and not the first bipolar heterojunction transistor.