US 12,324,225 B2
Self-aligned structure for semiconductor devices
Kuo-Cheng Chiang, Hsinchu County (TW); Chih-Hao Wang, Hsinchu County (TW); Shi Ning Ju, Hsinchu County (TW); Kuan-Lun Cheng, Hsin-Chu (TW); and Kuan-Ting Pan, Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd.
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 10, 2023, as Appl. No. 18/447,922.
Application 17/195,282 is a division of application No. 15/724,411, filed on Oct. 4, 2017, granted, now 10,943,830, issued on Mar. 9, 2021.
Application 18/447,922 is a continuation of application No. 17/195,282, filed on Mar. 8, 2021, granted, now 11,837,504.
Claims priority of provisional application 62/552,229, filed on Aug. 30, 2017.
Prior Publication US 2023/0386933 A1, Nov. 30, 2023
Int. Cl. H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10D 30/60 (2025.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10D 84/85 (2025.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H10D 86/00 (2025.01); H10D 86/01 (2025.01)
CPC H10D 84/038 (2025.01) [H10D 30/611 (2025.01); H10D 30/6219 (2025.01); H10D 30/792 (2025.01); H10D 64/017 (2025.01); H10D 84/0147 (2025.01); H10D 84/0151 (2025.01); H10D 84/0158 (2025.01); H10D 84/0193 (2025.01); H10D 84/834 (2025.01); H10D 84/853 (2025.01); H10D 86/011 (2025.01); H10D 86/215 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
an isolation structure on a substrate;
a first fin protruding from the substrate, wherein the first fin comprises first, second, and third portions, and top surfaces of the first and third portions are above a top surface of the isolation structure and a top surface of the second portion is below the top surface of the isolation structure;
a second fin protruding from the substrate and adjacent to the first fin, wherein a top surface of the second fin is below the top surface of the isolation structure;
a first dielectric fin on the top surface of the second portion of the first fin, wherein the first dielectric fin is between the first and second portions of the first fin; and
a second dielectric fin on the top surface of the second fin, wherein the second dielectric fin extends above the top surface of the isolation structure.