US 12,324,202 B2
Semiconductor device structure and method for forming the same
Kai-Hsuan Lee, Hsinchu (TW); Shih-Che Lin, Hsinchu (TW); Po-Yu Huang, Hsinchu (TW); Shih-Chieh Wu, Hsinchu (TW); I-Wen Wu, Hsinchu (TW); Chen-Ming Lee, Taoyuan County (TW); Fu-Kai Yang, Hsinchu (TW); and Mei-Yun Wang, Hsin-Chu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 19, 2021, as Appl. No. 17/531,258.
Claims priority of provisional application 63/186,912, filed on May 11, 2021.
Prior Publication US 2022/0367623 A1, Nov. 17, 2022
Int. Cl. H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01)
CPC H10D 62/118 (2025.01) [H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 64/021 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
nanostructures formed over a substrate;
a gate structure formed over and around the nanostructures;
a spacer layer formed over a sidewall of the gate structure over the nanostructures;
a source/drain epitaxial structure comprising an edge portion interfacing sidewalls of the nanostructures and a center portion over the edge portion;
a contact structure formed over the source/drain epitaxial structure; and
an air spacer disposed directly over the source/drain epitaxial structure and between the spacer layer and the contact structure,
wherein the edge portion and the center portion are doped and a dopant concentration in the edge portion is smaller than a dopant concentration in the center portion,
wherein the air spacer continuously and vertically extends into the source/drain epitaxial structure such that a portion of the edge portion and a portion of the center portion are exposed in the air spacer.