US 12,324,201 B2
Integrated circuit device with source/drain barrier
Feng-Ching Chu, Hsinchu (TW); Wei-Yang Lee, Taipei (TW); Yen-Ming Chen, Hsin-Chu County (TW); and Feng-Cheng Yang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 5, 2024, as Appl. No. 18/433,217.
Application 18/433,217 is a continuation of application No. 17/397,728, filed on Aug. 9, 2021, granted, now 11,894,421.
Application 17/397,728 is a continuation of application No. 17/001,464, filed on Aug. 24, 2020, granted, now 11,088,245, issued on Aug. 10, 2021.
Application 17/001,464 is a continuation of application No. 16/217,102, filed on Dec. 12, 2018, granted, now 10,756,171, issued on Aug. 25, 2020.
Application 16/217,102 is a continuation of application No. 15/796,968, filed on Oct. 30, 2017, granted, now 10,217,815, issued on Feb. 26, 2019.
Prior Publication US 2024/0178271 A1, May 30, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 62/10 (2025.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 62/00 (2025.01); H10D 62/13 (2025.01)
CPC H10D 62/116 (2025.01) [H01L 21/02057 (2013.01); H01L 21/02227 (2013.01); H01L 21/30604 (2013.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 30/797 (2025.01); H10D 62/021 (2025.01); H10D 62/151 (2025.01); H01L 21/3065 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first fin disposed on a substrate;
a second fin disposed on the substrate adjacent the first fin;
a first source/drain feature disposed on the first fin;
a second source/drain feature disposed on the second fin, wherein the first and second source/drain features are unmerged with respect to each other;
a first dielectric barrier layer disposed under and interfacing with the first source/drain feature, wherein the first dielectric barrier layer includes remnants selected from the group consisting of an etchant, a photoresist material and the first fin; and
a second dielectric barrier layer disposed under and interfacing with the second source/drain feature, wherein the second dielectric barrier layer is discontinuous with respect to the first dielectric barrier layer.