US 12,324,199 B2
Fill structures with air gaps
Hsiu-Yung Lin, New Taipei (TW); Yen Chuang, Taipei (TW); and Min-Hao Hong, Kaohsiung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 4, 2024, as Appl. No. 18/595,033.
Application 18/595,033 is a division of application No. 17/549,049, filed on Dec. 13, 2021, granted, now 11,961,884.
Claims priority of provisional application 63/168,765, filed on Mar. 31, 2021.
Prior Publication US 2024/0250121 A1, Jul. 25, 2024
Int. Cl. H01L 29/94 (2006.01); H01L 21/02 (2006.01); H01L 29/76 (2006.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01)
CPC H10D 62/115 (2025.01) [H01L 21/02252 (2013.01); H10D 30/6211 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a gate structure on first and second fin structures;
forming an opening to separate the gate structure into a first section on the first fin structure and a second section on the second fin structure;
filling a first portion of the opening with a dielectric material at a first deposition rate to form an air gap; and
filling a second portion of the opening with the dielectric material at a second deposition rate higher than the first deposition rate to seal the air gap.