US 12,324,178 B2
Lateral fin static induction transistor
Biqin Huang, Torrance, CA (US)
Assigned to HRL LABORATORIES, LLC, Malibu, CA (US)
Filed by HRL Laboratories, LLC, Malibu, CA (US)
Filed on Apr. 1, 2024, as Appl. No. 18/623,766.
Application 18/623,766 is a division of application No. 17/061,459, filed on Oct. 1, 2020, granted, now 11,978,789.
Application 16/281,727 is a division of application No. 15/896,048, filed on Feb. 13, 2018, granted, now 10,367,086, issued on Jul. 30, 2019.
Application 17/061,459 is a continuation of application No. 16/281,727, filed on Feb. 21, 2019, granted, now 10,892,355, issued on Dec. 22, 2020.
Claims priority of provisional application 62/519,721, filed on Jun. 14, 2017.
Prior Publication US 2024/0250160 A1, Jul. 25, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 62/83 (2025.01); H01L 21/761 (2006.01); H10D 12/01 (2025.01); H10D 30/00 (2025.01); H10D 30/01 (2025.01); H10D 30/87 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01); H10D 62/822 (2025.01); H10D 62/832 (2025.01); H10D 62/834 (2025.01); H10D 30/62 (2025.01)
CPC H10D 30/202 (2025.01) [H01L 21/761 (2013.01); H10D 12/031 (2025.01); H10D 30/01 (2025.01); H10D 30/87 (2025.01); H10D 62/114 (2025.01); H10D 62/117 (2025.01); H10D 62/149 (2025.01); H10D 62/221 (2025.01); H10D 62/822 (2025.01); H10D 62/83 (2025.01); H10D 62/8303 (2025.01); H10D 62/8325 (2025.01); H10D 62/834 (2025.01); H10D 30/62 (2025.01); H10D 62/121 (2025.01)] 5 Claims
OG exemplary drawing
 
1. A transistor comprising:
source and drain regions disposed on a substrate;
a fin disposed between the source and drain regions;
a the fin being at least partially covered by a conductive structure and a dielectric layer, the dielectric layer electrically insulating the conductive structure from the fin; wherein
the source and drain regions comprise diamond doped with a P-type dopant, and
the fin comprises diamond doped with a P-type dopant, wherein the P-type dopant concentration of the fin is less than the P-type dopant concentration of the source and drain regions.