US 12,324,154 B2
Microelectronic devices including pillars with partially-circular upper portions and circular lower portions, and related methods
Matthew J. King, Boise, ID (US); David A. Daycock, Boise, ID (US); Yoshiaki Fukuzumi, Tokyo (JP); Albert Fayrushin, Boise, ID (US); Richard J. Hill, Boise, ID (US); Chandra S. Tiwari, Boise, ID (US); and Jun Fujiki, Tokyo (JP)
Assigned to Lodestar Licensing Group LLC, Evanston, IL (US)
Filed by Lodestar Licensing Group LLC, Evanston, IL (US)
Filed on Oct. 23, 2023, as Appl. No. 18/492,689.
Application 18/492,689 is a continuation of application No. 17/661,659, filed on May 2, 2022, granted, now 11,800,717.
Application 17/661,659 is a continuation of application No. 17/007,951, filed on Aug. 31, 2020, granted, now 11,322,516, issued on May 3, 2022.
Prior Publication US 2024/0057337 A1, Feb. 15, 2024
Int. Cl. H10B 43/27 (2023.01); H01L 21/76 (2006.01); H01L 21/762 (2006.01); H10D 62/10 (2025.01)
CPC H10B 43/27 (2023.02) [H01L 21/76224 (2013.01); H10D 62/115 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a stack structure comprising vertically repeated tiers, the tiers individually comprising at least one insulative structure and at least one conductive structure;
a series of pillar structures extending through the stack structure, at least one of the pillar structures of the series comprising:
a lower pillar structure comprising a channel material and defining a substantially circular cross-sectional area; and
an upper pillar structure above the lower pillar structure, the upper pillar structure comprising an additional channel material and a plug structure, the plug structure comprising a conductive semiconductor material, the upper pillar structure and the plug structure thereof defining a partially-circular cross-sectional area; and
at least one isolation structure extending partially into neighboring upper pillar structures of neighboring pillar structures of the series of pillar structures.