US 12,324,143 B2
Methods of utilizing etch-stop material during fabrication of capacitors, integrated assemblies comprising capacitors
Sanh D. Tang, Meridian, ID (US); Ke-Hung Chen, Boise, ID (US); Christopher W. Petz, Boise, ID (US); Pankaj Sharma, Boise, ID (US); and Yong Mo Yang, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Apr. 17, 2020, as Appl. No. 16/851,588.
Prior Publication US 2021/0327881 A1, Oct. 21, 2021
Int. Cl. H10B 12/00 (2023.01); H10D 1/68 (2025.01); H10D 84/80 (2025.01)
CPC H10B 12/30 (2023.02) [H10D 1/692 (2025.01); H10D 84/811 (2025.01)] 9 Claims
OG exemplary drawing
 
1. A memory cell, comprising:
a switching device comprising a diode having an electrode comprising at least two separate and discrete material structures having a defined boundary between the two discrete material structures, wherein an upper surface of the electrode comprises a substantially round-nose-bullet-shape along a cross-section; and
a capacitor comprising a bottom electrode, cell dielectric material and a top electrode at least partially formed in a container opening, wherein the bottom electrode of the capacitor is in direct contact with the substantially round-nose-bullet-shape of the upper surface of the electrode of the switching device; and
wherein the bottom electrode and the cell dielectric material of the capacitor has to accommodate the contact with the round-nose-bullet-shape of the upper surface of the electrode with curved portions, the curved portions of the bottom electrode and the cell dielectric material being the only curved portions of the capacitor.