US 12,324,139 B2
Method for manufacturing semiconductor device and semiconductor device
Xiaojie Li, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jun. 15, 2022, as Appl. No. 17/806,980.
Application 17/806,980 is a continuation of application No. PCT/CN2022/080311, filed on Mar. 11, 2022.
Claims priority of application No. 202210031315.7 (CN), filed on Jan. 12, 2022.
Prior Publication US 2023/0225101 A1, Jul. 13, 2023
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/01 (2023.02) [H10B 12/50 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, comprising:
providing a semiconductor substrate comprising a first region and a second region;
forming a first dielectric layer on the semiconductor substrate;
forming a temporary layer on the first dielectric layer, wherein the formation of the temporary layer comprises:
forming a first protective layer on the first dielectric layer;
forming a first work function layer and a second protective layer on the first protective layer located in the first region in sequence;
forming a second work function layer and a third protective layer on the first protective layer located in the second region and the second protective layer located in the first region in sequence; and
forming a conductive layer on the third protective layer;
performing a first heat treatment process on the first dielectric layer and the temporary layer;
removing the temporary layer to expose the first dielectric layer; and
performing a second heat treatment process on the first dielectric layer.