US 12,323,683 B2
Sensing device for improving the speed of image sensing
Ya-Li Tsai, Miao-Li County (TW); Hui-Ching Yang, Miao-Li County (TW); Yang-Jui Huang, Miao-Li County (TW); and Te-Yu Lee, Miao-Li County (TW)
Assigned to INNOLUX CORPORATION, Miao-Li County (TW)
Filed by InnoLux Corporation, Miao-Li County (TW)
Filed on Oct. 28, 2022, as Appl. No. 18/050,610.
Claims priority of application No. 202111466454.4 (CN), filed on Dec. 3, 2021.
Prior Publication US 2023/0179844 A1, Jun. 8, 2023
Int. Cl. H04N 23/50 (2023.01); G03B 7/083 (2021.01)
CPC H04N 23/50 (2023.01) [G03B 7/083 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A sensing device configured to operate in a reset period, an exposure period, and a readout period, wherein the sensing device comprises:
a first transistor, comprising a control terminal and a first terminal;
a second transistor, coupled to the first transistor and configured to set a voltage of the control terminal during the reset period;
a sensing element, coupled to the first transistor and configured to change the voltage of the control terminal during the exposure period;
a third transistor, coupled to the first transistor and comprising an output terminal, wherein the output terminal is configured to output a sense signal from the first terminal during the readout period; and
a readout circuit, coupled to the output terminal and comprising:
a current mirror, coupled to the readout line; and
a supplying transistor, comprising a control terminal, a first terminal, and a second terminal, wherein the control terminal of the supplying transistor receives a bias voltage, the first terminal of the supplying transistor is coupled to a supply voltage, and the second terminal of the supplying transistor is coupled to the current mirror;
wherein the first transistor is an N-type transistor, and the third transistor is a P-type transistor.