| CPC H03K 19/018535 (2013.01) [H03K 17/102 (2013.01); H03K 17/6871 (2013.01); H03K 19/0013 (2013.01); H03K 19/01721 (2013.01)] | 20 Claims |

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1. A charge pump for a GaN logic circuit, comprising:
a first transistor configured to pull down an output voltage in response to an input voltage having a first level and pull up the output voltage in response to the input voltage having a second level; and
a second transistor having a first gate, a second gate, and an output terminal coupled to a gate of the first transistor and being configured to provide a first saturation current therethrough,
wherein the second transistor is configured to adjust the first saturation current therethrough by a second saturation current flowing into the first gate of the second transistor in response to the input voltage having the second level.
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