US 12,323,135 B2
High-side semiconductor switch with over-current protection
Paolo Del Croce, Villach (AT); and Francesco Morandotti, Villach (AT)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Mar. 13, 2023, as Appl. No. 18/182,989.
Claims priority of application No. 102022107156.1 (DE), filed on Mar. 25, 2022.
Prior Publication US 2023/0308089 A1, Sep. 28, 2023
Int. Cl. H03K 17/082 (2006.01); H02H 3/02 (2006.01)
CPC H03K 17/0822 (2013.01) [H02H 3/025 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A circuit comprising:
a high-side power transistor including a load current path coupled between a supply node and an output node, which is configured to provide, during operation, a load current to a load;
a gate driver circuit coupled to a control electrode of the power transistor;
a first stage of an overcurrent protection circuit coupled to the control electrode of the power transistor and configured to drive the control electrode such that a voltage drop across the load current path of the power transistor increases upon detection that the load current has reached a first threshold value, wherein the first stage includes a first current sensing circuit configured to provide a first current sense signal representing the load current; and
a second stage of the overcurrent protection circuit coupled to the control electrode of the power transistor and configured to drive the control electrode such that the load current is limited to a maximum value or that the power transistor is switched off upon detection that the load current has reached a second threshold value, wherein the second stage includes a second current sensing circuit configured to provide second current sense signal representing the load current.