US 12,323,076 B2
Ultrasonic wave-driven triboelectric generator with self-gap formed using plasma etching
SangWoo Kim, Yongin-si (KR); Young Jun Kim, Daejeon (KR); Young Wook Chung, Suwon-si (KR); and Joon Ha Hwang, Suwon-si (KR)
Assigned to Research & Business Foundation Sungkyunkwan University, Suwon-si (KR)
Filed by RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Suwon-si (KR)
Filed on Oct. 27, 2022, as Appl. No. 17/974,640.
Claims priority of application No. 10-2021-0146182 (KR), filed on Oct. 29, 2021.
Prior Publication US 2023/0135593 A1, May 4, 2023
Int. Cl. H02N 1/04 (2006.01); A61N 1/36 (2006.01); A61N 1/378 (2006.01); A61N 7/00 (2006.01)
CPC H02N 1/04 (2013.01) [A61N 1/3605 (2013.01); A61N 1/378 (2013.01); A61N 2007/0021 (2013.01)] 12 Claims
OG exemplary drawing
 
1. An ultrasonic wave-driven triboelectric generator having a self-gap formed by plasma etching, the ultrasonic wave-driven triboelectric generator comprising:
a first triboelectric layer made of a conductive material and serving as a first electrode;
a second triboelectric layer disposed to face a frictional face of the first triboelectric layer, wherein the second triboelectric layer has a frictional face treated by plasma etching; and
a package made of titanium and surrounding at least a portion of the first triboelectric layer and the second triboelectric layer,
wherein the frictional face of the second triboelectric layer is plasma-etched to have a surface roughness such that there is a predefined gap between the first and second triboelectric layers, and
wherein when an ultrasonic wave is applied to the generator, the first triboelectric layer and the second triboelectric layer repeatedly contact each other and separate from each other to generate triboelectric energy.