US 12,323,071 B2
Efficient power electronics arrangement
Uwe Waltrich, Forchheim (DE); Stanley Buchert, Herzogenaurach (DE); Marco Bohlländer, Hirschaid (DE); and Claus Müller, Berlin (DE)
Assigned to Rolls-Royce Deutschland Ltd & Co KG, Blankenfelde-Mahlow (DE)
Filed by Rolls-Royce Deutschland Ltd & Co KG, Blankenfelde-Mahlow (DE)
Filed on Jun. 19, 2024, as Appl. No. 18/748,045.
Application 18/748,045 is a continuation of application No. 18/212,712, filed on Jun. 21, 2023, granted, now 12,057,784.
Application 18/212,712 is a continuation of application No. 17/900,492, filed on Aug. 31, 2022, granted, now 11,728,743, issued on Aug. 15, 2023.
Claims priority of application No. 10 2022 205 498.9 (DE), filed on May 31, 2022.
Prior Publication US 2024/0339936 A1, Oct. 10, 2024
Int. Cl. H02M 7/00 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01)
CPC H02M 7/003 (2013.01) [H01L 23/49822 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A power electronics converter comprising:
a commutation cell comprising a power circuit and a gate driver circuit, the power circuit comprising at least one power semiconductor switching element and at least one capacitor, each power semiconductor switching element of the at least one power semiconductor switching element having at least three terminals, the at least three terminals including a gate terminal, a source terminal, and a drain terminal,
wherein the gate driver circuit is electrically connected to and configured to provide switching signals to the gate terminal of each power semiconductor switching element of the at least one power semiconductor switching element, and
wherein a peak rated power output of the power electronics converter is greater than 25 KW, and a value of a converter parameter ε is greater than or equal to 1026 V/s4, ε being equal to:

OG Complex Work Unit Math
and
wherein:
fmax is a maximum switching frequency of the switching signals;
|dv/dt|max is a maximum rate of change of a source-drain voltage of the at least one power semiconductor switching element during operation;
L is a parasitic inductance of the power circuit of the commutation cell; and
C is a total rated capacitance of the at least one capacitor of the power circuit.